? 1996 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1000 v v cgr t j = 25 c to 150 c; r ge = 1 m w 1000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c50a i c90 t c = 90 c25a i cm t c = 25 c, 1 ms 100 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 w i cm = 50 a (rbsoa) clamped inductive load, l = 100 m h @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) 1.13/10 nm/lb.in. weight to-204 = 18 g, to-247 = 6 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 4.5 ma, v ge = 0 v 1000 v v ge(th) i c = 500 m a, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 ? v ces t j = 25 c 500 m a v ge = 0 v t j = 125 c8ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 25n100u1 3.5 v 25n100au1 4.0 v v ces i c25 v ce(sat) 1000 v 50 a 3.5 v 1000 v 50 a 4.0 v preliminary data 95587 (9/96) ixgh25n100u1 IXGH25N100AU1 low v ce(sat) high speed igbt with diode g c e to-247 ad (ixgh) g = gate c = collector e = emitter tab = collector features l international standard package jedec to-247 ad l igbt and anti-parallel fred in one package l 2nd generation hdmos tm process l l low v ce(sat) - for minimum on-state conduction losses l mos gate turn-on - drive simplicity l fast recovery epitaxial diode (fred) - soft recovery with low i rm applications l ac motor speed control l dc servo and robot drives l dc choppers l uninterruptible power supplies (ups) l switch-mode and resonant-mode power supplies advantages l saves space (two devices in one package) l easy to mount (isolated mounting screw hole) l l reduces assembly time and cost
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixgh25n100u1 IXGH25N100AU1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 8 15 s pulse test, t 300 m s, duty cycle 2 % c ies 2750 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 270 pf c res 50 pf q g 130 180 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 25 60 nc q gc 55 90 nc t d(on) 100 ns t ri 200 ns t d(off) 500 ns t fi 25n100au1 500 ns e off 25n100au1 5 mj t d(on) 100 ns t ri 250 ns e on 3.5 mj t d(off) 720 1000 ns t fi 25n100u1 950 3000 ns 25n100au1 800 ns e off 25n100u1 10 mj 25n100au1 6 mj r thjc 0.62 k/w r thck 0.25 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, 2.5 v pulse test, t 300 m s, duty cycle d 2 % i rm i f = i c90 , v ge = 0 v, -di f /dt = 240 a/ m s1618a t rr v r = 540 v t j =125 c 120 ns i f = 1 a; -di/dt = 100 a/ m s; v r = 30 v t j =25 c35 50ns r thjc 1 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 300 m h v ce = 0.8 v ces , r g = r off = 33 w remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 300 m h, v ce = 0.8 v ces , r g = r off = 33 w remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g 1 = gate 2 = collector 3 = emitter tab = collector to-247 ad outline
? 1996 ixys all rights reserved ixgh25n100u1 IXGH25N100AU1
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixgh25n100u1 IXGH25N100AU1
? 1996 ixys all rights reserved di f /dt - a/s 0 200 400 600 t rr - nanoseconds 0.0 0.2 0.4 0.6 0.8 di f /dt - a/s 200 400 600 i rm - amperes 0 10 20 30 40 50 di f /dt - a/s 1 10 100 1000 q r - nanocoulombs 0 1 2 3 4 t j = 100c v r = 540v t j - degrees c 0 40 80 120 160 normalized i rm /q r 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 q r i rm di f /dt - a/s 0 100 200 300 400 500 600 t fr - nanoseconds 0 200 400 600 800 1000 v fr - volts 0 10 20 30 40 50 t fr v fr t j = 125c i f =37a voltage drop - volts 0.5 1.0 1.5 2.0 2.5 3.0 3.5 current - amperes 0 20 40 60 80 100 t j = 150c t j = 100c t j = 25c typ. i f = 60a i f = 30a i f = 15a typ. i f = 60a i f = 30a i f = 15a max. i f = 30a typ. i f = 60a i f = 30a i f = 15a max. i f = 30a max. i f = 30a t j = 100c v r = 540v t j = 100c v r = 540v fig.11 maximum forward voltage drop fig.12 peak forward voltage v fr and forward recovery time t fr fig.13 junction temperature dependence fig.14 reverse recovery chargee off i rm and q r fig.15 peak reverse recovery current fig.16 reverse recovery time ixgh25n100u1 IXGH25N100AU1
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixgh25n100u1 IXGH25N100AU1 fig.17 diode transient thermal resistance junction to case pulse width - seconds 0.001 0.01 0.1 1 r thjc - k/w 0.01 0.10 1.00
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